JPH0614480Y2 - 半導体熱処理装置 - Google Patents
半導体熱処理装置Info
- Publication number
- JPH0614480Y2 JPH0614480Y2 JP1988055211U JP5521188U JPH0614480Y2 JP H0614480 Y2 JPH0614480 Y2 JP H0614480Y2 JP 1988055211 U JP1988055211 U JP 1988055211U JP 5521188 U JP5521188 U JP 5521188U JP H0614480 Y2 JPH0614480 Y2 JP H0614480Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- heat
- semiconductor
- treatment area
- core tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 title claims description 82
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 235000012431 wafers Nutrition 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000035939 shock Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 45
- 238000012545 processing Methods 0.000 description 15
- 238000007789 sealing Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- 230000003139 buffering effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 238000002791 soaking Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988055211U JPH0614480Y2 (ja) | 1988-04-26 | 1988-04-26 | 半導体熱処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988055211U JPH0614480Y2 (ja) | 1988-04-26 | 1988-04-26 | 半導体熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01162234U JPH01162234U (en]) | 1989-11-10 |
JPH0614480Y2 true JPH0614480Y2 (ja) | 1994-04-13 |
Family
ID=31281109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988055211U Expired - Lifetime JPH0614480Y2 (ja) | 1988-04-26 | 1988-04-26 | 半導体熱処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0614480Y2 (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117083252A (zh) * | 2021-04-07 | 2023-11-17 | Agc株式会社 | 二氧化硅玻璃部件及其制造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127001A (ja) * | 1999-10-28 | 2001-05-11 | Applied Materials Inc | 半導体製造装置 |
JP2005150573A (ja) * | 2003-11-19 | 2005-06-09 | Kyocera Corp | 不純物拡散装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605218B2 (ja) * | 1977-08-24 | 1985-02-08 | 株式会社日立製作所 | 熱バランス用治具 |
JPS5623741A (en) * | 1979-08-06 | 1981-03-06 | Toshiba Ceramics Co Ltd | Quartz glass furnace core tube for manufacturing semiconductor |
JPS5674923A (en) * | 1979-11-22 | 1981-06-20 | Oki Electric Ind Co Ltd | Core tube device for furnace |
JPS5748270U (en]) * | 1980-08-30 | 1982-03-18 | ||
JPS57162329A (en) * | 1981-03-30 | 1982-10-06 | Fujitsu Ltd | Heat treatment of semiconductor substrate |
JPS5810354U (ja) * | 1981-07-15 | 1983-01-22 | 株式会社日立製作所 | 電界放射型陰極 |
JPS58148427A (ja) * | 1982-10-20 | 1983-09-03 | Toshiba Ceramics Co Ltd | 半導体製造用石英ガラス製炉芯管 |
JPS6122454A (ja) * | 1984-07-11 | 1986-01-31 | Canon Inc | 磁気光学記録媒体 |
JPS62123713A (ja) * | 1985-11-25 | 1987-06-05 | Hitachi Hokkai Semiconductor Ltd | ウエハチヤ−ジ治具及びウエハ表面処理方法 |
JPS62259434A (ja) * | 1986-04-14 | 1987-11-11 | Shinetsu Sekiei Kk | 石英ガラス製治具 |
JPS6317300A (ja) * | 1986-07-08 | 1988-01-25 | Shinetsu Sekiei Kk | 石英ガラス製炉芯管 |
JPS6331530U (en]) * | 1986-08-14 | 1988-03-01 | ||
JPH0824109B2 (ja) * | 1986-08-29 | 1996-03-06 | 信越石英株式会社 | 石英ガラス製ウエ−ハボート搬送治具 |
-
1988
- 1988-04-26 JP JP1988055211U patent/JPH0614480Y2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117083252A (zh) * | 2021-04-07 | 2023-11-17 | Agc株式会社 | 二氧化硅玻璃部件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH01162234U (en]) | 1989-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0181942B1 (ko) | 반도체 가공용 내압 열반응로 시스템 | |
CN105009273B (zh) | 基座支撑部及包含基座支撑部的外延生长设备 | |
US5332442A (en) | Surface processing apparatus | |
US6437290B1 (en) | Heat treatment apparatus having a thin light-transmitting window | |
EP0198842B1 (en) | Reactor apparatus for semiconductor wafer processing | |
JP3206566B2 (ja) | 熱処理装置及び熱処理方法 | |
US20040004989A1 (en) | Temperature measuring method, heat treating device and method, computer program, and radiation thermometer | |
JP2002532871A (ja) | 複数のウェハを処理するための急速熱処理チャンバ | |
US6825615B2 (en) | Lamp having a high-reflectance film for improving directivity of light and heat treatment apparatus having such a lamp | |
TW201407687A (zh) | 用於基板處理系統的氣體分配裝置 | |
JP3011866B2 (ja) | 枚葉式ウエーハ熱処理装置 | |
JPH07335579A (ja) | 熱処理炉 | |
JP2781616B2 (ja) | 半導体ウエハの熱処理装置 | |
JPH0614480Y2 (ja) | 半導体熱処理装置 | |
JP2013535097A (ja) | 基板処理システムで使用するための窓アセンブリ | |
KR100439276B1 (ko) | 급속열처리 장치 | |
US20050109275A1 (en) | Reactor chamber | |
JP2019201202A (ja) | ヒータブロック、熱処理装置及びその熱処理方法 | |
CN116364606A (zh) | 半导体工艺设备的反应腔室及半导体工艺设备 | |
US3673983A (en) | High capacity deposition reactor | |
JP2764436B2 (ja) | 縦型拡散炉 | |
US5860805A (en) | Effluent-gas-scavenger system for process tube, minimizing back diffusion and atmospheric contamination | |
KR20230004325A (ko) | 석영 불투명화를 감소하기 위한 반도체 증착 반응기 및 구성 요소 | |
JPH08288232A (ja) | 半導体熱処理炉ガス制御治具 | |
JP2549302Y2 (ja) | 縦型熱処理装置 |